IRLR120NTRPBF datasheet by International Rectifier

IRLR120NTRPBF Frequently Asked Questions (FAQs)

• What is the thermal resistance of the IRLR120NTRPBF?
  The thermal resistance of the IRLR120NTRPBF is typically around 2.5°C/W (junction-to-case) and 62°C/W (junction-to-ambient) when mounted on a 1in² copper pad.
• Can I use the IRLR120NTRPBF in a high-frequency switching application?
  Yes, the IRLR120NTRPBF is suitable for high-frequency switching applications up to 1MHz, but it's essential to consider the device's switching losses, gate charge, and layout to minimize ringing and ensure reliable operation.
• How do I ensure the IRLR120NTRPBF is properly cooled in my design?
  To ensure proper cooling, provide a sufficient heat sink, use thermal interface material, and maintain a low thermal resistance between the device and the heat sink. Also, consider the maximum junction temperature (Tj) of 150°C and the maximum power dissipation (PD) of 78W.
• What is the recommended gate drive voltage for the IRLR120NTRPBF?
  The recommended gate drive voltage for the IRLR120NTRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can reduce switching losses but may also increase gate charge and power consumption.
• Can I use the IRLR120NTRPBF in a parallel configuration to increase current handling?
  Yes, you can use multiple IRLR120NTRPBF devices in parallel to increase current handling, but it's crucial to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing and potential oscillations.