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    Part Img IRLR120NTR datasheet by International Rectifier

    • 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package; A IRLR120N with Tape and Reel Packaging
    • Original
    • Unknown
    • No
    • Transferred
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
    • Find it at Findchips.com

    IRLR120NTR datasheet preview

    IRLR120NTR Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRLR120NTR is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance.
    • To ensure proper thermal management, make sure to attach a heat sink to the device, and ensure good airflow around the component. The thermal resistance (RθJA) of the device is 40°C/W, so a heat sink with a thermal resistance of 10°C/W or lower is recommended.
    • The recommended gate drive voltage for the IRLR120NTR is 10-15V, but it can operate with a gate drive voltage as low as 5V. However, a higher gate drive voltage may be required for high-frequency applications.
    • Yes, the IRLR120NTR is a high-reliability device that meets the requirements of AEC-Q101, making it suitable for automotive and other high-reliability applications.
    • To protect the IRLR120NTR from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static bag or container. The device has an ESD rating of 2kV human body model (HBM) and 150V machine model (MM).
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