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    Part Img IRLI530N datasheet by International Rectifier

    • 100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package; A IRLI530N with Standard Packaging
    • Original
    • No
    • Unknown
    • Transferred
    • EAR99
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    IRLI530N datasheet preview

    IRLI530N Frequently Asked Questions (FAQs)

    • The maximum junction temperature for the IRLI530N is 150°C. However, it's recommended to operate it at a lower temperature to ensure reliability and longevity.
    • Yes, the IRLI530N is suitable for high-frequency switching applications up to 1 MHz. However, you need to ensure that the gate drive circuitry is capable of providing a fast rise and fall time to minimize switching losses.
    • You can calculate the power dissipation of the IRLI530N by using the following formula: Pd = (Vds * Ids) + (Vgs * Igs) + (Rds(on) * Ids^2). You need to consider the voltage and current ratings, as well as the switching frequency and duty cycle, to accurately estimate the power dissipation.
    • The recommended gate resistor value for the IRLI530N depends on the specific application and the gate drive circuitry. A typical value is around 10-20 ohms, but you may need to adjust it based on the gate drive voltage and the switching frequency.
    • Yes, you can use multiple IRLI530N devices in parallel to increase the current handling capability. However, you need to ensure that the devices are properly matched and that the gate drive circuitry is capable of driving multiple devices in parallel.
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