IRLD120PBF datasheet by Vishay Siliconix

IRLD120PBF Frequently Asked Questions (FAQs)

• What is the maximum operating temperature range for the IRLD120PBF?
  The maximum operating temperature range for the IRLD120PBF is -55°C to 150°C.
• How do I ensure the IRLD120PBF is properly biased for optimal performance?
  To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 4V, and the drain-source voltage (Vds) should be between 1V and 30V.
• What is the recommended PCB layout for the IRLD120PBF to minimize parasitic inductance?
  To minimize parasitic inductance, use a compact PCB layout with short, wide traces, and place the MOSFET close to the power source. Avoid using vias or narrow traces near the MOSFET.
• How do I protect the IRLD120PBF from electrostatic discharge (ESD)?
  To protect the IRLD120PBF from ESD, use an ESD wrist strap or mat, and handle the device by the body or pins, not the leads. Store the device in an anti-static bag or container.
• What is the recommended gate resistor value for the IRLD120PBF?
  The recommended gate resistor value for the IRLD120PBF is between 10Ω and 100Ω, depending on the specific application and switching frequency.