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    Part Img IRLD120 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 1.3A 4-DIP
    • Original
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    • Transferred
    • EAR99
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    IRLD120 datasheet preview

    IRLD120 Frequently Asked Questions (FAQs)

    • The maximum safe operating area (SOA) for the IRLD120 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the specified maximum ratings and avoid operating conditions that may cause excessive heat, voltage, or current stress.
    • To ensure proper thermal management, it's essential to provide a good thermal path from the device to a heat sink or the PCB. This can be achieved by using a thermal interface material (TIM) such as thermal paste or thermal tape, and ensuring that the device is mounted securely to the heat sink or PCB. Additionally, the PCB design should allow for good airflow and heat dissipation.
    • The recommended gate drive voltage for the IRLD120 is typically between 10V to 15V, depending on the specific application and switching frequency. However, it's essential to ensure that the gate drive voltage is within the specified maximum rating of 20V to avoid damaging the device.
    • Yes, the IRLD120 is suitable for high-frequency switching applications up to several hundred kHz. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure that the gate drive circuitry is capable of providing a clean and fast switching signal.
    • To protect the IRLD120 from ESD, it's essential to handle the device with care and follow proper ESD handling procedures. This includes using ESD-safe packaging, handling the device with ESD-safe tools, and ensuring that the device is properly grounded during assembly and testing.
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