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    Part Img IRLB8721PBF datasheet by International Rectifier

    • 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
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    IRLB8721PBF datasheet preview

    IRLB8721PBF Frequently Asked Questions (FAQs)

    • The maximum junction temperature for the IRLB8721PBF is 150°C. However, it's recommended to operate the device at a temperature below 125°C for optimal performance and reliability.
    • Yes, the IRLB8721PBF is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, gate drive requirements, and layout considerations to ensure reliable operation.
    • To ensure proper cooling, provide a heat sink with a thermal resistance of less than 10°C/W, and apply a thin layer of thermal interface material (TIM) between the device and the heat sink. Also, ensure good airflow around the heat sink and avoid blocking the airflow with other components.
    • The recommended gate drive voltage for the IRLB8721PBF is between 10 V and 15 V. A higher gate drive voltage can reduce the device's on-state resistance, but it may also increase the switching losses.
    • Yes, you can use multiple IRLB8721PBF devices in parallel to increase the current handling capability. However, it's crucial to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing.
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