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    IRL3803STRLPBF datasheet by International Rectifier

    • 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRL3803STRL with Lead Free Packaging on Tape and Reel Left
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
    • Find it at Findchips.com

    IRL3803STRLPBF datasheet preview

    IRL3803STRLPBF Frequently Asked Questions (FAQs)

    • The thermal resistance of the IRL3803STRLPBF depends on the specific application and PCB design. However, a typical value for junction-to-ambient thermal resistance (RθJA) is around 40-50°C/W. For a more accurate estimate, consult the application note AN-1140 from International Rectifier.
    • To ensure proper driving of the IRL3803STRLPBF, use a gate driver with a high current capability (e.g., 1-2 A) and a low output impedance. Also, make sure to use a suitable gate resistor (e.g., 10-20 ohms) to control the rise and fall times of the gate signal. Consult the application note AN-978 from International Rectifier for more details.
    • To minimize parasitic inductance and ensure reliable operation, follow these guidelines: keep the drain and source pins as close as possible to the PCB ground plane, use a solid ground plane under the device, and keep the gate signal traces short and away from the power traces. Consult the application note AN-1140 from International Rectifier for more detailed layout and PCB design recommendations.
    • To protect the IRL3803STRLPBF from overvoltage and overcurrent conditions, use a suitable voltage clamp or transient voltage suppressor (TVS) on the drain pin, and consider adding an overcurrent protection circuit (e.g., a current sense resistor and a comparator) to detect and respond to excessive current conditions.
    • To prevent damage from electrostatic discharge (ESD), store the IRL3803STRLPBF in its original packaging or in a static-shielding bag, and handle the device with an ESD wrist strap or mat. Avoid touching the device pins or exposing them to static-prone environments.
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