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    IRL3303S datasheet by International Rectifier

    • 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRL3303S with Standard Packaging
    • Original
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    IRL3303S datasheet preview

    IRL3303S Frequently Asked Questions (FAQs)

    • The maximum safe operating area (SOA) for the IRL3303S is not explicitly stated in the datasheet, but it can be estimated based on the device's voltage and current ratings. As a general rule, it's recommended to operate the device within 80% of its maximum voltage and current ratings to ensure reliable operation.
    • The junction-to-case thermal resistance (RθJC) for the IRL3303S is not explicitly stated in the datasheet. However, it can be estimated using the device's package thermal resistance (RθJA) and the thermal resistance of the PCB (RθPCB). A typical value for RθJC is around 1-2°C/W.
    • The recommended gate drive voltage for the IRL3303S is typically between 10-15V, depending on the specific application and switching frequency. A higher gate drive voltage can improve switching speed and reduce losses, but may also increase power consumption and EMI.
    • Yes, the IRL3303S is suitable for high-frequency switching applications up to several hundred kHz. However, it's essential to consider the device's switching losses, gate charge, and parasitic capacitances when designing the circuit. Additionally, ensure that the device is properly cooled and that the PCB is designed to minimize parasitic inductances and capacitances.
    • The internal diode in the IRL3303S can cause voltage spikes and ringing during switching. To mitigate this, use a snubber circuit or a diode clamp to absorb the voltage spikes. Additionally, ensure that the gate drive circuit is designed to quickly turn off the device and minimize the diode's conduction time.
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