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    IRHMS57Z60 datasheet by International Rectifier

    • RADIATION HARDENED POWER MOSFET THRU-HOLE
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    IRHMS57Z60 datasheet preview

    IRHMS57Z60 Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRHMS57Z60 is -40°C to 150°C, with a junction temperature (TJ) of up to 175°C.
    • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good airflow around the device. The heat sink should be attached using a thermal interface material with a thermal conductivity of at least 1 W/m-K.
    • The recommended gate drive voltage for the IRHMS57Z60 is between 10V and 15V, with a maximum gate-source voltage of ±20V.
    • Overvoltage protection can be achieved using a voltage clamp or a zener diode, while overcurrent protection can be achieved using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
    • The maximum allowable dv/dt for the IRHMS57Z60 is 10V/ns, to prevent false triggering and ensure reliable operation.
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