The maximum junction temperature for the IRGS30B60KPBF is 150°C, but it's recommended to operate at a maximum of 125°C for reliable operation and to prevent thermal runaway.
The thermal resistance of the IRGS30B60KPBF can be calculated using the junction-to-case thermal resistance (RθJC) and the case-to-ambient thermal resistance (RθCA). The RθJC is specified in the datasheet as 0.5°C/W, and the RθCA depends on the heat sink and cooling system used. You can use the following formula: RθJA = RθJC + RθCA.
The recommended gate drive voltage for the IRGS30B60KPBF is between 10V and 15V, with a maximum of 20V. However, it's recommended to use a gate drive voltage of 12V to 15V for optimal switching performance and to prevent false triggering.
Yes, the IRGS30B60KPBF can be used in a parallel configuration, but it's essential to ensure that the gate drive signals are synchronized and that the devices are matched in terms of threshold voltage and switching characteristics. Additionally, the current sharing between devices should be carefully considered to prevent uneven current distribution and thermal runaway.
The recommended dead time for the IRGS30B60KPBF in a half-bridge configuration is typically around 100ns to 200ns, depending on the switching frequency and the specific application requirements. However, it's essential to ensure that the dead time is sufficient to prevent shoot-through currents and to allow for proper switching transitions.
IRGS30B60KPBF datasheet
by International Rectifier
