The maximum junction temperature for the IRGS15B60KDPBF is 150°C. However, it's recommended to operate the device at a temperature below 125°C for reliable operation and to ensure a long lifespan.
To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. The heat sink should be mounted to the device using a thermal interface material with a thermal conductivity of at least 1 W/m-K. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
The recommended gate drive voltage for the IRGS15B60KDPBF is between 10V and 15V. However, the device can tolerate gate drive voltages up to 20V. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device.
Yes, the IRGS15B60KDPBF can be used in a parallel configuration to increase the current handling capability. However, it's crucial to ensure that the devices are matched in terms of their electrical characteristics and that the gate drive signals are synchronized to prevent uneven current sharing.
The recommended dead time for the IRGS15B60KDPBF in a half-bridge configuration is typically between 100ns and 500ns. The dead time should be set based on the specific application requirements and the device's switching characteristics.
IRGS15B60KDPBF datasheet
by International Rectifier
