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    Part Img IRG7PH35UPBF datasheet by International Rectifier

    • IGBTs - Single, Discrete Semiconductor Products, IGBT 1200V 55A 210W TO247AC
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
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    IRG7PH35UPBF datasheet preview

    IRG7PH35UPBF Frequently Asked Questions (FAQs)

    • The maximum junction temperature for the IRG7PH35UPBF is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
    • Yes, the IRG7PH35UPBF is suitable for high-frequency switching applications due to its low switching losses and fast switching times. However, it's essential to consider the device's maximum switching frequency, which is 100 kHz, and ensure that the application's switching frequency is within this limit.
    • To ensure the reliability of the IRG7PH35UPBF in a high-temperature environment, it's crucial to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and ensuring good airflow around the device. Additionally, consider derating the device's power handling capability at higher temperatures.
    • The recommended gate drive voltage for the IRG7PH35UPBF is between 10 V and 15 V. However, it's essential to ensure that the gate drive voltage is within the specified range to prevent damage to the device.
    • Yes, the IRG7PH35UPBF can be used in a parallel configuration to increase power handling capability. However, it's crucial to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing and potential damage to the devices.
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