The maximum junction temperature of the IRG4PH50SPBF is 175°C.
Yes, the IRG4PH50SPBF is suitable for high-frequency switching applications up to 100 kHz, but it's recommended to consult the application note AN-1005 for proper design considerations.
To ensure reliability, it's recommended to derate the power dissipation of the IRG4PH50SPBF according to the temperature derating curve provided in the datasheet, and to use a suitable heat sink to maintain a safe junction temperature.
Yes, the IRG4PH50SPBF can be used in a parallel configuration to increase current handling, but it's recommended to ensure that the devices are properly matched and that the gate drive circuitry is designed to handle the increased current.
The recommended gate drive voltage for the IRG4PH50SPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.