The maximum junction temperature of the IRG4PH30KPBF is 175°C.
Yes, the IRG4PH30KPBF is suitable for high-frequency switching applications up to 100 kHz, but the user should ensure that the device is properly cooled and the maximum junction temperature is not exceeded.
The thermal resistance of the IRG4PH30KPBF can be calculated using the formula: RθJA = (TJ - TA) / P, where RθJA is the thermal resistance, TJ is the junction temperature, TA is the ambient temperature, and P is the power dissipation.
The recommended gate drive voltage for the IRG4PH30KPBF is 15V, but it can be operated with a gate drive voltage as low as 10V.
Yes, the IRG4PH30KPBF can be used in a parallel configuration, but the user should ensure that the devices are properly matched and the current sharing is even.