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    Part Img IRG4PC50KD datasheet by International Rectifier

    • INSULATED GATE BIPOLAR TRANSISTOR
    • Original
    • No
    • Unknown
    • Transferred
    • EAR99
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    IRG4PC50KD datasheet preview

    IRG4PC50KD Frequently Asked Questions (FAQs)

    • The maximum allowable power dissipation of the IRG4PC50KD is dependent on the operating conditions, but it is typically around 200-250 W. However, it's recommended to derate the power dissipation based on the junction temperature and other factors to ensure reliable operation.
    • Proper cooling of the IRG4PC50KD is crucial to prevent overheating. Ensure good thermal contact between the module and the heat sink, and use a heat sink with a thermal resistance of less than 0.5°C/W. Also, ensure good airflow around the heat sink and avoid blocking the airflow.
    • The recommended gate resistance for the IRG4PC50KD is between 10 ohms and 100 ohms. A higher gate resistance can help reduce electromagnetic interference (EMI) and improve noise immunity, but it may also increase the turn-on time and reduce the switching frequency.
    • Yes, the IRG4PC50KD can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the modules are matched in terms of their electrical characteristics and that the gate drive circuits are properly synchronized to prevent uneven current sharing.
    • The maximum allowable voltage transient for the IRG4PC50KD is around 1.5 times the maximum rated voltage. However, it's recommended to limit the voltage transient to less than 1.2 times the maximum rated voltage to ensure reliable operation and prevent damage to the module.
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