The maximum junction temperature of the IRG4BC30WPBF is 175°C.
Yes, the IRG4BC30WPBF is suitable for high-frequency switching applications up to 100 kHz due to its low switching losses and fast switching times.
To ensure reliability, it is recommended to derate the device's power handling capability at high temperatures, and to use a suitable heat sink to keep the junction temperature below 150°C.
The recommended gate drive voltage for the IRG4BC30WPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
Yes, the IRG4BC30WPBF can be used in a parallel configuration to increase current handling, but it is essential to ensure that the devices are matched and that the gate drive signals are synchronized to prevent uneven current sharing.