The maximum safe operating area (SOA) for the IRFZ42 is not explicitly stated in the datasheet. However, STMicroelectronics provides a SOA curve in the application note AN440, which shows the maximum allowable drain-source voltage and drain current for the device.
The junction-to-case thermal resistance (RθJC) for the IRFZ42 is not directly provided in the datasheet. However, the datasheet provides the thermal resistance from junction to ambient (RθJA) and the thermal resistance from case to ambient (RθCA). You can calculate RθJC by subtracting RθCA from RθJA.
The recommended gate drive voltage for the IRFZ42 is not explicitly stated in the datasheet. However, a general rule of thumb is to use a gate drive voltage of 10-15V to ensure reliable switching and minimize power losses.
The IRFZ42 is a standard MOSFET and not optimized for high-frequency switching applications. It has a relatively high gate-drain charge (Qgd) and output capacitance (Coss), which can lead to high switching losses at high frequencies. For high-frequency applications, consider using a MOSFET with lower Qgd and Coss, such as the STP16NF06L.
To ensure the IRFZ42 is fully turned on, apply a gate-source voltage (Vgs) of at least 10V and a gate drive current sufficient to charge the gate capacitance quickly. You can also use a gate driver IC to provide a high-current gate drive signal.
IRFZ42 datasheet
by STMicroelectronics
