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    Part Img IRFZ34N datasheet by International Rectifier

    • HEXFET Power MOSFET
    • Original
    • No
    • Unknown
    • Transferred
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
    • Find it at Findchips.com

    IRFZ34N datasheet preview

    IRFZ34N Frequently Asked Questions (FAQs)

    • The maximum safe operating area (SOA) for the IRFZ34N is typically defined by the manufacturer as the region where the device can operate safely without damage. This information is usually provided in the datasheet or application notes. For the IRFZ34N, the SOA is typically limited by the maximum drain-source voltage (Vds) and drain current (Id).
    • To ensure the IRFZ34N is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate drive should be able to provide sufficient current to charge the gate capacitance quickly. A gate resistor (Rg) of around 10-20 ohms is recommended to limit the gate current and prevent ringing.
    • The maximum junction temperature (Tj) for the IRFZ34N is 175°C. Operating the device above this temperature can reduce its lifespan and affect its performance.
    • Yes, the IRFZ34N is suitable for high-frequency switching applications due to its low gate charge (Qg) and low output capacitance (Coss). However, the device's performance may degrade at very high frequencies (>100 kHz) due to its internal capacitances and inductances.
    • To protect the IRFZ34N from overvoltage and overcurrent, consider using a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.
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