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    IRFU9310 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 400V 1.8A I-PAK
    • Original
    • Unknown
    • Unknown
    • Obsolete
    • Find it at Findchips.com

    IRFU9310 datasheet preview

    IRFU9310 Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRFU9310 is -55°C to 175°C, as specified in the datasheet. However, it's recommended to derate the power dissipation at higher temperatures to ensure reliable operation.
    • To calculate the power dissipation of the IRFU9310, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance. The power dissipation can be calculated using the formula: Pd = (Vds x Id) + (Vgs x Igs), where Vds is the drain-source voltage, Id is the drain current, Vgs is the gate-source voltage, and Igs is the gate-source current.
    • The recommended gate drive voltage for the IRFU9310 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can reduce the switching losses, but may also increase the gate charge and power consumption.
    • To ensure the IRFU9310 is properly biased for optimal performance, you need to ensure that the gate-source voltage (Vgs) is within the recommended range, typically between 2V to 4V. You should also ensure that the drain-source voltage (Vds) is within the recommended range, typically between 10V to 30V, depending on the specific application.
    • The IRFU9310 has a high power density, which requires proper thermal management to ensure reliable operation. You should consider using a heat sink, thermal interface material, and a PCB design that allows for good thermal conduction. The maximum junction temperature (Tj) should be kept below 175°C to prevent thermal runaway and ensure reliable operation.
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