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    Part Img IRFU120NPBF datasheet by International Rectifier

    • 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU120N with Lead Free Packaging
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
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    IRFU120NPBF datasheet preview

    IRFU120NPBF Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRFU120NPBF is -55°C to 150°C, with a junction temperature of up to 175°C.
    • To ensure proper cooling, the IRFU120NPBF should be mounted on a heat sink with a thermal resistance of less than 1°C/W. Additionally, the device should be operated at a maximum junction temperature of 150°C to prevent thermal runaway.
    • The recommended gate drive voltage for the IRFU120NPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
    • Yes, the IRFU120NPBF is suitable for high-frequency switching applications up to 1MHz, but the user should ensure that the device is properly snubbed and that the gate drive is optimized for high-frequency operation.
    • To protect the IRFU120NPBF from overvoltage and overcurrent, the user should implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits, such as a voltage clamp or a current sense resistor, to prevent damage to the device.
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