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    Part Img IRFS9N60ATRRPBF datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 9.2A D2PAK
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
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    IRFS9N60ATRRPBF datasheet preview

    IRFS9N60ATRRPBF Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRFS9N60ATRRPBF is -55°C to 175°C.
    • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and a gate current (Ig) that is sufficient to charge the gate capacitance quickly.
    • The recommended gate resistor value for the IRFS9N60ATRRPBF is typically in the range of 10Ω to 100Ω, depending on the specific application and switching frequency.
    • Yes, the IRFS9N60ATRRPBF is suitable for high-frequency switching applications up to 1MHz, but it's essential to consider the MOSFET's switching losses, gate charge, and layout parasitics to ensure reliable operation.
    • To protect the MOSFET from overvoltage and overcurrent, use a voltage clamp or a zener diode to limit the voltage, and a current sense resistor or a fuse to detect and respond to overcurrent conditions.
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