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    Part Img IRFS4310ZPBF datasheet by International Rectifier

    • 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRFS4310ZPBF with Standard Packaging
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
    • 8541.29.00.95
    • Find it at Findchips.com

    IRFS4310ZPBF datasheet preview

    IRFS4310ZPBF Frequently Asked Questions (FAQs)

    • The maximum operating junction temperature of the IRFS4310ZPBF is 175°C.
    • Yes, the IRFS4310ZPBF is suitable for high-frequency switching applications up to 1 MHz due to its low gate charge and internal gate resistance.
    • To ensure proper cooling, make sure to provide a sufficient heat sink and thermal interface material between the device and the heat sink. The thermal resistance of the heat sink should be low enough to keep the junction temperature below the maximum rating.
    • The recommended gate drive voltage for the IRFS4310ZPBF is between 10V and 15V to ensure proper switching and minimize power losses.
    • Yes, the IRFS4310ZPBF can be used in a parallel configuration to increase current handling, but it's essential to ensure that the devices are properly matched and the gate drive signals are synchronized to prevent uneven current sharing.
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