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    Part Img IRFS4310PBF datasheet by International Rectifier

    • 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRFS4310 with Lead Free Packaging
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
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    IRFS4310PBF datasheet preview

    IRFS4310PBF Frequently Asked Questions (FAQs)

    • The maximum operating junction temperature of the IRFS4310PBF is 175°C, but it's recommended to keep it below 150°C for reliable operation.
    • Proper thermal management involves providing a heat sink with a thermal resistance of less than 1°C/W, ensuring good airflow, and keeping the device away from heat sources.
    • The recommended gate drive voltage for the IRFS4310PBF is between 10V and 15V, with a maximum of 20V. A higher gate drive voltage can reduce switching losses but may increase gate oxide stress.
    • Yes, the IRFS4310PBF is suitable for high-frequency switching applications up to 1MHz, but it's essential to consider the device's switching losses, gate drive requirements, and thermal management.
    • Use a voltage clamp or a zener diode to protect the device from overvoltage conditions. For overcurrent protection, use a current sense resistor and a comparator or a dedicated overcurrent protection IC.
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