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    Part Img IRFS4010PBF datasheet by International Rectifier

    • 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
    • Find it at Findchips.com

    IRFS4010PBF datasheet preview

    IRFS4010PBF Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRFS4010PBF is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance.
    • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good airflow around the device. The heat sink should be attached using a thermal interface material with a thermal conductivity of at least 1 W/m-K.
    • The recommended gate drive voltage for the IRFS4010PBF is between 10V and 15V, with a maximum voltage of 20V. A higher gate drive voltage can improve switching performance, but may also increase power consumption.
    • Overvoltage protection can be achieved using a voltage clamp or a zener diode, while overcurrent protection can be achieved using a current sense resistor and a comparator or a dedicated overcurrent protection IC. Additionally, a fuse or a circuit breaker can be used to protect against excessive current.
    • A good PCB layout for the IRFS4010PBF should minimize parasitic inductance and capacitance, and ensure good thermal conductivity. This can be achieved by using a multi-layer PCB with a solid ground plane, and placing the device close to the heat sink. The gate drive circuitry should be placed close to the device, and the power traces should be wide and short.
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