Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    Part Img IRFS3107PBF datasheet by International Rectifier

    • 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
    • Powered by Findchips Logo Findchips

    IRFS3107PBF datasheet preview

    IRFS3107PBF Frequently Asked Questions (FAQs)

    • The maximum junction temperature of IRFS3107PBF is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
    • To calculate the power dissipation of IRFS3107PBF, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance. The formula is: Pd = (Vds * Ids) + (Vgs * Igs), where Pd is the power dissipation, Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.
    • The recommended gate drive voltage for IRFS3107PBF is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and the desired switching characteristics.
    • Yes, IRFS3107PBF is suitable for high-frequency switching applications up to 1MHz. However, you need to ensure that the device is properly cooled and the switching losses are minimized to prevent overheating.
    • To protect IRFS3107PBF from overvoltage and overcurrent, you can use a voltage clamp circuit and a current sense resistor. Additionally, you can implement overvoltage and overcurrent protection circuits using external components such as zener diodes and fuses.
    Supplyframe Tracking Pixel