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    Part Img IRFR3708PBF datasheet by International Rectifier

    • 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR3708 with Lead Free Packaging
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
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    IRFR3708PBF datasheet preview

    IRFR3708PBF Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRFR3708PBF is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance.
    • Proper cooling can be achieved by providing a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device. Additionally, the PCB layout should be designed to minimize thermal resistance and provide a low-impedance path for heat dissipation.
    • The recommended gate drive voltage for the IRFR3708PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can improve switching performance, but may also increase power consumption.
    • To protect the IRFR3708PBF from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, a current sense resistor and a fuse can be used to detect and limit excessive current.
    • The recommended PCB layout for the IRFR3708PBF includes a low-impedance power path, a separate ground plane for the gate driver, and a heat sink pad with multiple vias to dissipate heat. The layout should also minimize parasitic inductance and capacitance to ensure optimal performance.
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