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    Part Img IRFR024NTR datasheet by International Rectifier

    • 55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
    • Original
    • No
    • Unknown
    • Obsolete
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
    • Find it at Findchips.com

    IRFR024NTR datasheet preview

    IRFR024NTR Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRFR024NTR is -55°C to 175°C, as specified in the datasheet. However, it's recommended to derate the power handling at high temperatures to ensure reliable operation.
    • To ensure proper thermal management, it's essential to provide a good thermal path from the device to a heat sink or the PCB. Use a thermal interface material, such as thermal paste or thermal tape, and ensure the heat sink is properly attached to the device. Additionally, consider the PCB layout and thermal design to minimize thermal resistance.
    • The recommended gate drive voltage for the IRFR024NTR is between 10V and 15V, with a maximum gate-source voltage of ±20V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
    • Yes, the IRFR024NTR is suitable for high-frequency switching applications up to 1MHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure the gate drive circuitry is capable of providing a clean, high-frequency signal.
    • To protect the IRFR024NTR from overvoltage and overcurrent conditions, consider using a voltage clamp or a transient voltage suppressor (TVS) diode to limit the voltage across the device. Additionally, use a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.
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