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    Part Img IRFP27N60KPBF datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 27A TO-247AC
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
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    IRFP27N60KPBF datasheet preview

    IRFP27N60KPBF Frequently Asked Questions (FAQs)

    • The SOA is not explicitly stated in the datasheet, but it can be estimated using the device's thermal resistance, maximum junction temperature, and voltage ratings. Consult the application note AN1045 from Vishay Siliconix for guidance on SOA calculations.
    • To ensure fast switching, use a gate driver with a high current capability (>1A) and a low output impedance. Also, ensure the gate-source voltage (Vgs) is sufficient (>10V) and the gate resistance (Rg) is minimized (<10Ω).
    • The maximum allowed Vds during switching is not explicitly stated in the datasheet. However, as a general rule, it's recommended to limit Vds to <80% of the maximum rated voltage (600V) to ensure reliable operation.
    • Use a heat sink with a thermal resistance (Rth) <1°C/W and ensure good thermal contact between the device and heat sink. Also, consider using a thermal interface material (TIM) to reduce thermal resistance.
    • Use a PCB layout that minimizes parasitic inductance and resistance. Keep the drain and source pins close together, and use a solid ground plane to reduce electromagnetic interference (EMI).
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