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    Part Img IRFP260NPBF datasheet by International Rectifier

    • 200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
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    IRFP260NPBF datasheet preview

    IRFP260NPBF Frequently Asked Questions (FAQs)

    • The maximum safe operating area (SOA) for the IRFP260NPBF is typically defined by the manufacturer as the region where the device can operate safely without damage. This information is usually provided in the datasheet or application notes. For the IRFP260NPBF, the SOA is typically limited by the maximum drain-source voltage (Vds) and drain current (Id).
    • To ensure proper thermal management of the IRFP260NPBF, it's essential to provide a good thermal path from the device to a heat sink or other cooling mechanism. This can be achieved by applying a thermal interface material (TIM) to the device, using a heat sink with a high thermal conductivity, and ensuring good airflow around the device.
    • The recommended gate drive voltage for the IRFP260NPBF is typically between 10V to 15V, depending on the specific application and required switching speed. A higher gate drive voltage can result in faster switching times, but may also increase power consumption and electromagnetic interference (EMI).
    • To protect the IRFP260NPBF from electrostatic discharge (ESD), it's essential to handle the device by the body or use an anti-static wrist strap or mat. The device should also be stored in an anti-static bag or tube, and all equipment and tools used during assembly should be grounded.
    • The maximum allowed drain-source voltage (Vds) for the IRFP260NPBF is 200V. Exceeding this voltage can result in device damage or failure.
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