Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IRFP260 datasheet by International Rectifier

    • HEXFET Power MOSFET
    • Scan
    • No
    • Unknown
    • Transferred
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
    • Find it at Findchips.com
    • Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

    IRFP260 datasheet preview

    IRFP260 Frequently Asked Questions (FAQs)

    • The maximum safe operating area (SOA) for the IRFP260 is not explicitly stated in the datasheet, but it can be determined by consulting the International Rectifier application note AN-936, which provides SOA curves for the device.
    • To ensure proper thermal management, the IRFP260 should be mounted on a heat sink with a thermal resistance of less than 1°C/W. The heat sink should be designed to handle the maximum power dissipation of the device, and the thermal interface material should be applied according to the manufacturer's recommendations.
    • The recommended gate drive voltage for the IRFP260 is between 10V and 15V, with a maximum gate-source voltage of 20V. A higher gate drive voltage can improve switching performance, but may also increase power consumption and EMI.
    • Yes, the IRFP260 can be paralleled for higher current applications, but it requires careful consideration of the circuit design and layout to ensure equal current sharing and minimal thermal mismatch between devices.
    • The maximum allowed dv/dt for the IRFP260 is 50V/ns, but it's recommended to limit dv/dt to 10V/ns or less to minimize the risk of voltage oscillations and EMI.
    Price & Stock Powered by Findchips Logo
    Supplyframe Tracking Pixel