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    Part Img IRFP140NPBF datasheet by International Rectifier

    • 100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package; Similar to IRFP140N with Lead Free Packaging
    • Original
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    • Yes
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    • EAR99
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    IRFP140NPBF datasheet preview

    IRFP140NPBF Frequently Asked Questions (FAQs)

    • The maximum safe operating area (SOA) for the IRFP140NPBF is not explicitly stated in the datasheet, but it can be determined by consulting the International Rectifier application note AN-936, which provides guidelines for calculating the SOA for power MOSFETs.
    • The junction-to-case thermal resistance (RθJC) for the IRFP140NPBF can be calculated using the thermal resistance values provided in the datasheet. The RθJC is typically around 0.5°C/W for this device.
    • The recommended gate drive voltage for the IRFP140NPBF is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can improve switching performance, but may also increase power consumption.
    • Yes, the IRFP140NPBF is suitable for high-frequency switching applications up to several hundred kHz. However, the device's switching performance and power losses should be carefully evaluated to ensure reliable operation.
    • To handle the IRFP140NPBF's high peak current capability during startup or fault conditions, it is recommended to use a current limiting circuit or a soft-start circuit to gradually ramp up the current. Additionally, the device's overcurrent protection and fault detection mechanisms should be implemented to prevent damage.
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