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    IRFL9110PBF datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 1.1A SOT223
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
    • 8541.29.00.95
    • Find it at Findchips.com
    • Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

    IRFL9110PBF datasheet preview

    IRFL9110PBF Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRFL9110PBF is -55°C to 175°C.
    • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
    • The recommended gate drive voltage for the IRFL9110PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
    • Yes, the IRFL9110PBF is suitable for switching applications due to its low RDS(on) and high switching speed. However, ensure proper gate drive and layout to minimize ringing and EMI.
    • Calculate power dissipation using the formula: Pd = I²R, where I is the drain current and R is the RDS(on) of the device. Consider both conduction and switching losses.
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