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    Part Img IRFL9110PBF datasheet by International Rectifier

    • HEXFET Power MOSFET ( VDSS = -100V , RDS(on) = 1.2 Ohm , ID = -1.1A )
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.29.00.95
    • 8541.29.00.80
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    IRFL9110PBF datasheet preview

    IRFL9110PBF Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRFL9110PBF is -55°C to 175°C, but it's recommended to operate within -40°C to 150°C for optimal performance and reliability.
    • To ensure proper biasing, make sure to provide a stable voltage supply to the gate (Vgs) within the recommended range of 0 to 20V, and maintain a sufficient voltage difference between the drain (Vds) and source (Vss) terminals.
    • For optimal thermal management, use a PCB with a thick copper layer (at least 2 oz) and ensure good thermal conductivity between the device and the heat sink. Keep the drain and source pins as close as possible to the heat sink, and use thermal vias to dissipate heat efficiently.
    • Yes, the IRFL9110PBF is suitable for high-frequency switching applications up to 1 MHz, but be aware of the potential for increased power losses and electromagnetic interference (EMI). Ensure proper PCB layout, decoupling, and filtering to minimize these effects.
    • Use a voltage regulator or a voltage clamp to limit the voltage across the device, and consider adding overcurrent protection (OCP) and overtemperature protection (OTP) circuits to prevent damage from excessive current or temperature.
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