The maximum junction temperature for the IRFIZ48NPBF is 175°C. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
To calculate the power dissipation of the IRFIZ48NPBF, you need to know the drain-to-source voltage (Vds), drain current (Id), and the Rds(on) of the MOSFET. The power dissipation can be calculated using the formula: Pd = Vds x Id x Rds(on).
The recommended gate drive voltage for the IRFIZ48NPBF is between 10V to 15V. However, the gate drive voltage should be limited to 20V maximum to prevent damage to the MOSFET.
Yes, the IRFIZ48NPBF is suitable for high-frequency switching applications up to 1MHz. However, the MOSFET's switching characteristics, such as rise and fall times, should be considered to ensure reliable operation.
To protect the IRFIZ48NPBF from ESD, it's recommended to handle the device with an anti-static wrist strap or mat, and to use ESD-sensitive packaging and storage materials. Additionally, the device should be soldered into the circuit board using an ESD-safe soldering iron.
IRFIZ48NPBF datasheet
by International Rectifier
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