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    Part Img IRFHM831TRPBF datasheet by International Rectifier

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 14A PQFN
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
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    IRFHM831TRPBF datasheet preview

    IRFHM831TRPBF Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRFHM831TRPBF is -55°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
    • To ensure proper cooling, it's essential to provide a heat sink with a thermal resistance of less than 10°C/W. The heat sink should be attached to the device using a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
    • The recommended gate drive voltage for the IRFHM831TRPBF is between 10V and 15V. However, the device can tolerate gate drive voltages up to 20V. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device.
    • To protect the IRFHM831TRPBF from overvoltage and overcurrent, it's recommended to use a voltage clamp or a zener diode to limit the voltage across the device. Additionally, use a current sense resistor and a fuse to detect and respond to overcurrent conditions. Implementing a thermal protection circuit can also help prevent damage from overheating.
    • The recommended PCB layout for the IRFHM831TRPBF involves keeping the power traces short and wide to minimize inductance and resistance. Ensure the drain and source pins are connected to a solid copper plane to provide a low-impedance path for current flow. Keep the gate drive circuitry separate from the power circuitry to minimize noise and interference.
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