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    Part Img IRFD9110 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 700MA 4-DIP
    • Original
    • No
    • No
    • Transferred
    • EAR99
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    IRFD9110 datasheet preview

    IRFD9110 Frequently Asked Questions (FAQs)

    • The maximum safe operating area (SOA) for the IRFD9110 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general guideline, the SOA is typically limited by the device's maximum junction temperature (Tj) and voltage ratings. For the IRFD9110, the maximum Tj is 175°C, and the maximum voltage rating is 100V. Therefore, the SOA would be limited to operating conditions that do not exceed these ratings.
    • To ensure the IRFD9110 is properly biased for optimal performance, follow these guidelines: 1) Ensure the gate-source voltage (Vgs) is within the recommended range of 2-4V for optimal switching performance. 2) Use a suitable gate driver circuit to provide a fast rise and fall time for the gate signal. 3) Ensure the drain-source voltage (Vds) is within the recommended range of 0-100V. 4) Use a suitable heat sink to maintain a low junction temperature (Tj) and ensure reliable operation.
    • For optimal performance and reliability, follow these PCB design guidelines for the IRFD9110: 1) Use a multi-layer PCB with a solid ground plane to reduce electromagnetic interference (EMI). 2) Keep the drain and source pins as close as possible to the heat sink to minimize thermal resistance. 3) Use a wide copper trace for the drain and source connections to reduce resistance and inductance. 4) Place the gate driver circuit close to the IRFD9110 to minimize gate signal delay and ringing. 5) Use a decoupling capacitor (e.g., 100nF) between the drain and source pins to reduce voltage ringing and oscillations.
    • To protect the IRFD9110 from overvoltage and overcurrent conditions, consider the following measures: 1) Use a voltage clamp or transient voltage suppressor (TVS) to limit the maximum voltage across the drain-source pins. 2) Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC. 3) Use a fuse or a polyfuse to limit the maximum current through the device. 4) Ensure the device is operated within its recommended safe operating area (SOA) to prevent thermal runaway and damage.
    • To ensure reliable operation and prevent thermal damage, follow these thermal management considerations for the IRFD9110: 1) Use a suitable heat sink with a thermal resistance (Rth) of less than 10°C/W to maintain a low junction temperature (Tj). 2) Ensure good thermal contact between the device and the heat sink using a thermal interface material (TIM). 3) Keep the ambient temperature (Ta) below 70°C to prevent excessive junction temperature rise. 4) Use a thermal monitoring circuit to detect and respond to overheating conditions.
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