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    Part Img IRFD120 datasheet by International Rectifier

    • HEXFET Power MOSFETs
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    • No
    • Unknown
    • Transferred
    • EAR99
    • 8541.29.00.95
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    IRFD120 datasheet preview

    IRFD120 Frequently Asked Questions (FAQs)

    • The maximum safe operating area (SOA) for the IRFD120 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage ratings. As a general guideline, the SOA is typically limited by the device's thermal resistance, voltage rating, and current rating. For the IRFD120, the SOA is approximately 100V, 10A, and 100°C.
    • To ensure the IRFD120 is properly biased for optimal performance, make sure to provide a stable gate-source voltage (Vgs) within the recommended range of 4-10V. Also, ensure the drain-source voltage (Vds) is within the recommended range of 0-100V, and the drain current (Id) is within the recommended range of 0-10A. Additionally, provide a low-impedance power supply and a proper heat sink to prevent thermal runaway.
    • The recommended gate resistor value for the IRFD120 depends on the specific application and switching frequency. As a general guideline, a gate resistor value between 10Ω to 100Ω is recommended to ensure proper gate-source voltage and to prevent ringing and oscillations. However, the optimal gate resistor value may need to be experimentally determined based on the specific application requirements.
    • To protect the IRFD120 from overvoltage and overcurrent conditions, consider using a voltage clamp or a zener diode to limit the maximum voltage across the device. Additionally, use a current sense resistor and a comparator or an overcurrent protection IC to detect and respond to overcurrent conditions. Also, ensure the device is properly heat-sinked and thermally managed to prevent thermal runaway.
    • The typical turn-on and turn-off time for the IRFD120 depends on the specific application and gate drive circuitry. However, based on the datasheet, the typical turn-on time is around 10-20ns, and the typical turn-off time is around 20-30ns. These times can be improved by optimizing the gate drive circuitry and using a high-speed gate driver.
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