Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 800V, 4.1A, Pkg Style TO-220AB
The maximum safe operating area (SOA) for the IRFBE30 is not explicitly stated in the datasheet, but it can be estimated based on the device's voltage and current ratings. As a general rule, it's recommended to operate the device within 20% of its maximum voltage and current ratings to ensure safe operation.
The junction-to-case thermal resistance (RθJC) for the IRFBE30 is not directly provided in the datasheet. However, you can estimate it using the thermal resistance values provided in the datasheet. For example, the thermal resistance from junction to ambient (RθJA) is 62°C/W, and the thermal resistance from case to ambient (RθCA) is 30°C/W. You can calculate RθJC as RθJC = RθJA - RθCA = 32°C/W.
The recommended gate drive voltage for the IRFBE30 is not explicitly stated in the datasheet, but it's typically recommended to use a gate drive voltage between 10V and 15V to ensure proper switching and minimize power losses.
The IRFBE30 is a general-purpose MOSFET and not optimized for high-frequency switching applications. While it can be used in switching applications, its performance may not be optimal above 100 kHz. For high-frequency applications, it's recommended to use a MOSFET specifically designed for high-frequency switching, such as the IRF510 or IRF540.
The IRFBE30 has an internal body diode that can conduct during switching transitions. To minimize power losses and ensure proper operation, it's recommended to use a fast-recovery diode (FRD) or a Schottky diode in parallel with the MOSFET to provide a low-impedance path for the diode current.
