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    IRFBC20 datasheet by International Rectifier

    • TO-220 Plastic Package HEXFETs
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    • EAR99
    • 8541.29.00.95
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    IRFBC20 datasheet preview

    IRFBC20 Frequently Asked Questions (FAQs)

    • The maximum safe operating area (SOA) for the IRFBC20 is not explicitly stated in the datasheet, but it can be determined by consulting the International Rectifier application note AN-936, which provides SOA curves for the device.
    • The junction-to-case thermal resistance (RθJC) for the IRFBC20 can be calculated using the thermal resistance values provided in the datasheet. RθJC = RθJL + RθLS, where RθJL is the junction-to-lead thermal resistance and RθLS is the lead-to-case thermal resistance.
    • The recommended gate drive voltage for the IRFBC20 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can improve switching performance, but may also increase power consumption.
    • Yes, the IRFBC20 is suitable for high-frequency switching applications up to several hundred kHz. However, the device's switching performance and power losses should be carefully evaluated to ensure reliable operation and minimize heat generation.
    • To protect the IRFBC20 from electrostatic discharge (ESD), it is recommended to follow proper handling and storage procedures, such as using anti-static wrist straps, mats, and packaging materials. Additionally, ESD protection devices such as TVS diodes or ESD suppressors can be used in the circuit design.
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