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    IRFB31N20D datasheet by International Rectifier

    • 200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFB31N20D with Standard Packaging
    • Original
    • No
    • Unknown
    • Obsolete
    • EAR99
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    IRFB31N20D datasheet preview

    IRFB31N20D Frequently Asked Questions (FAQs)

    • The maximum safe operating area (SOA) for the IRFB31N20D is typically defined by the manufacturer as the region where the device can operate safely without damage. This information is usually provided in the datasheet or application notes. For the IRFB31N20D, the SOA is typically limited by the maximum drain-source voltage (Vds) and drain current (Id).
    • To ensure proper thermal management of the IRFB31N20D, it's essential to provide a good thermal path from the device to a heat sink or other cooling mechanism. This can be achieved by applying a thermal interface material (TIM) to the device, using a heat sink with a high thermal conductivity, and ensuring good airflow around the device.
    • The recommended gate drive voltage for the IRFB31N20D is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can help to reduce switching losses, but may also increase the risk of gate oxide damage.
    • To protect the IRFB31N20D from electrostatic discharge (ESD), it's essential to handle the device by the body or use an anti-static wrist strap or mat. Additionally, the device should be stored in an anti-static bag or container, and all equipment and tools used to handle the device should be grounded.
    • The maximum allowed drain-source voltage (Vds) for the IRFB31N20D is 200V. Exceeding this voltage can cause permanent damage to the device.
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