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    Part Img IRFB23N15DPBF datasheet by International Rectifier

    • 150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFB23N15DPBF with Standard Packaging
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
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    IRFB23N15DPBF datasheet preview

    IRFB23N15DPBF Frequently Asked Questions (FAQs)

    • The SOA is not explicitly stated in the datasheet, but it can be estimated using the device's thermal resistance, maximum junction temperature, and voltage ratings. A general guideline is to limit the device's operation to a maximum of 50% of its maximum voltage and current ratings.
    • To minimize switching losses, ensure the gate drive voltage is sufficient (typically 10-15V) and the gate resistance is low (typically <10 ohms). Also, consider using a gate driver IC or a dedicated gate drive circuit to provide a fast rise and fall time.
    • For optimal thermal performance, use a multi-layer PCB with a solid ground plane and a thermal relief pattern under the device. Ensure good thermal conductivity between the device and the heat sink or PCB. A thermal interface material (TIM) can be used to improve heat transfer.
    • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the device from overvoltage conditions. For overcurrent protection, consider using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
    • Follow the manufacturer's recommended soldering profile and handling procedures to prevent damage to the device. Use a soldering iron with a temperature-controlled tip and avoid applying excessive force or bending the leads.
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