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    Part Img IRF9520 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 6.8A TO-220AB
    • Original
    • No
    • Unknown
    • Transferred
    • EAR99
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    IRF9520 datasheet preview

    IRF9520 Frequently Asked Questions (FAQs)

    • The maximum safe operating area (SOA) for the IRF9520 is not explicitly stated in the datasheet, but it can be determined by consulting the Vishay Siliconix application note AN608A, which provides SOA curves for the device.
    • To ensure proper thermal management, the IRF9520 should be mounted on a heat sink with a thermal resistance of less than 1°C/W, and the device should be operated within its specified maximum junction temperature (Tj) of 175°C. Additionally, the PCB layout should be designed to minimize thermal impedance and ensure good airflow around the device.
    • The recommended gate drive voltage for the IRF9520 is between 10V and 15V, with a minimum of 4V to ensure proper turn-on. However, the optimal gate drive voltage may vary depending on the specific application and operating conditions.
    • Yes, the IRF9520 can be used in high-frequency switching applications up to 1MHz, but the device's switching losses and parasitic capacitances should be carefully considered in the design. Additionally, the gate drive circuitry should be optimized to minimize ringing and ensure proper turn-on and turn-off.
    • To protect the IRF9520 from ESD, it is recommended to handle the device with anti-static precautions, such as using an anti-static wrist strap or mat, and to ensure that the device is properly packaged and stored in an ESD-safe environment. Additionally, ESD protection devices such as TVS diodes or ESD protection arrays can be used to protect the device from ESD events.
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