The maximum safe operating area (SOA) for the IRF9520 is not explicitly stated in the datasheet, but it can be determined by consulting the International Rectifier application note AN-936, which provides guidelines for calculating the SOA for power MOSFETs.
The junction-to-case thermal resistance (RθJC) for the IRF9520 can be calculated using the thermal resistance values provided in the datasheet. The RθJC is typically around 0.5°C/W for the IRF9520, but it can vary depending on the specific application and cooling conditions.
The recommended gate drive voltage for the IRF9520 is typically between 10V to 15V, but it can vary depending on the specific application and switching frequency. A higher gate drive voltage can improve the switching performance, but it also increases the power consumption and EMI.
To prevent shoot-through current in a half-bridge configuration using the IRF9520, it is recommended to use a dead-time control circuit to ensure that the high-side and low-side MOSFETs are not turned on simultaneously. Additionally, the gate drive voltage and switching frequency should be optimized to minimize the overlap time between the two MOSFETs.
The maximum allowed drain-source voltage (VDS) for the IRF9520 during startup and shutdown is typically around 100V, but it can vary depending on the specific application and circuit configuration. It is recommended to use a soft-start circuit or a voltage ramp-up circuit to limit the VDS during startup and shutdown.
