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    Part Img IRF840 datasheet by Vishay Siliconix

    • FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 8A TO-220AB
    • Original
    • Unknown
    • Unknown
    • Obsolete
    • EAR99
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    IRF840 datasheet preview

    IRF840 Frequently Asked Questions (FAQs)

    • The maximum SOA for the IRF840 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. A safe operating area can be estimated to be around 10V and 10A.
    • To ensure the IRF840 is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate drive should be able to provide a current of at least 1A. Additionally, the gate resistor should be as low as possible to minimize the turn-on time.
    • The maximum frequency of operation for the IRF840 is not explicitly stated in the datasheet, but it is typically limited by the device's switching characteristics and the application's requirements. As a general rule, the IRF840 can operate up to several hundred kHz, but the actual frequency limit will depend on the specific application and circuit design.
    • To protect the IRF840 from overvoltage and overcurrent, a voltage clamp or a zener diode can be used to limit the voltage across the device. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.
    • The thermal resistance of the IRF840 is typically around 62°C/W for the junction-to-case thermal resistance (RθJC) and around 125°C/W for the junction-to-ambient thermal resistance (RθJA). These values can be used to estimate the device's junction temperature and ensure safe operation.
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