Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IRF830 datasheet by Harris Semiconductor

    • Power MOSFET Selection Guide
    • Original
    • No
    • Unknown
    • Transferred
    • EAR99
    • 8541.29.00.95
    • Find it at Findchips.com
    • Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

    IRF830 datasheet preview

    IRF830 Frequently Asked Questions (FAQs)

    • The maximum operating temperature of the IRF830 is 175°C (347°F).
    • Yes, the IRF830 is suitable for high-frequency switching applications up to 1 MHz, but it's essential to ensure proper gate drive and layout to minimize ringing and oscillations.
    • To ensure the IRF830 is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate drive circuit can provide sufficient current to charge the gate capacitance quickly.
    • The maximum allowable drain-source voltage (Vds) for the IRF830 is 500V.
    • No, the IRF830 is not suitable for linear amplifier applications due to its high threshold voltage and limited linear operation range. It's primarily designed for switching applications.
    Price & Stock Powered by Findchips Logo
    Supplyframe Tracking Pixel