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    Part Img IRF7901D1TR datasheet by International Rectifier

    • 30V FETKY - MOSFET and Schottky Diode in a SO-8 package; A IRF7901D1 with Tape and Reel Packaging
    • Original
    • No
    • Unknown
    • Obsolete
    • EAR99
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    IRF7901D1TR datasheet preview

    IRF7901D1TR Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRF7901D1TR is -55°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
    • To ensure proper biasing, make sure to provide a stable voltage supply to the gate-source voltage (Vgs) within the recommended range of 2V to 4V. Additionally, ensure the drain-source voltage (Vds) is within the specified range of 30V to 40V, and the drain current (Id) is within the recommended range of 10A to 20A.
    • For optimal thermal management, it's recommended to use a PCB with a thick copper layer (at least 2 oz) and a thermal pad under the device. Ensure good thermal conductivity by using thermal vias and a heat sink if necessary. Keep the PCB layout compact and symmetrical to minimize parasitic inductance and capacitance.
    • To protect the IRF7901D1TR from overvoltage and overcurrent conditions, use a voltage regulator or a voltage clamp to limit the voltage supply to the recommended range. Additionally, use a current sense resistor and a fuse or a current limiter to prevent excessive current flow. Implement overvoltage and overcurrent protection circuits, such as a crowbar circuit or a foldback current limiter, to ensure the device is protected from damage.
    • The recommended gate drive circuits for the IRF7901D1TR include a totem pole driver, a bootstrap driver, or a dedicated gate driver IC. Ensure the gate drive circuit provides a fast rise and fall time (typically <10ns) and a sufficient current drive capability (typically >1A) to charge and discharge the gate capacitance.
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