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    Part Img IRF7832TR datasheet by International Rectifier

    • FET Misc, HexMOSFET Power MosMOSFET, Tape and Reel
    • Original
    • No
    • Unknown
    • Transferred
    • EAR99
    • Find it at Findchips.com
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    IRF7832TR datasheet preview

    IRF7832TR Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRF7832TR is -55°C to 175°C, but it's recommended to operate within -40°C to 150°C for optimal performance and reliability.
    • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good airflow around the device. Additionally, the PCB layout should be designed to minimize thermal resistance and ensure good heat dissipation.
    • The recommended gate drive voltage for the IRF7832TR is between 10V to 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can improve switching performance, but may also increase power consumption.
    • To protect the IRF7832TR from overvoltage and overcurrent, use a voltage regulator or a voltage clamp to limit the voltage to the recommended maximum rating. Additionally, use a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.
    • The recommended layout and routing for the IRF7832TR involves keeping the high-frequency switching nodes (e.g. drain and source) as close as possible to the device, and using a solid ground plane to reduce electromagnetic interference (EMI). Additionally, use a Kelvin connection for the gate drive to minimize parasitic inductance.
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