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    Part Img IRF7491 datasheet by International Rectifier

    • 80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
    • Original
    • No
    • Unknown
    • Obsolete
    • EAR99
    • Find it at Findchips.com

    IRF7491 datasheet preview

    IRF7491 Frequently Asked Questions (FAQs)

    • The maximum junction temperature for the IRF7491 is 175°C. Exceeding this temperature can lead to device failure or reduced lifespan.
    • To ensure the IRF7491 is fully turned on, the gate-source voltage (Vgs) should be at least 10V for the 100V device and 15V for the 200V device. Additionally, the gate drive circuit should be able to provide sufficient current to charge the gate capacitance quickly.
    • The recommended gate resistor value for the IRF7491 depends on the specific application and gate drive circuit. A typical value is between 10Ω to 100Ω. A lower value can help reduce switching losses, but may increase the risk of oscillations.
    • Yes, the IRF7491 can be used in high-frequency switching applications up to 1MHz. However, the device's switching losses and gate charge requirements should be carefully considered to ensure reliable operation.
    • To protect the IRF7491 from voltage spikes and transients, a clamping circuit or a transient voltage suppressor (TVS) can be used. Additionally, a snubber circuit can help reduce voltage ringing and overshoot.
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