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    IRF7341QTR datasheet by International Rectifier

    • 55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
    • Original
    • No
    • Yes
    • Obsolete
    • EAR99
    • Find it at Findchips.com

    IRF7341QTR datasheet preview

    IRF7341QTR Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRF7341QTR is -55°C to 150°C, but it's recommended to operate within -40°C to 125°C for optimal performance.
    • To ensure proper biasing, make sure to provide a stable voltage supply to the gate-source voltage (Vgs) within the recommended range of 2V to 4V, and maintain a low impedance path to the drain-source voltage (Vds).
    • The recommended gate resistor value for the IRF7341QTR is typically in the range of 10Ω to 100Ω, depending on the specific application and switching frequency. A higher value can help reduce electromagnetic interference (EMI), but may increase switching losses.
    • Yes, the IRF7341QTR is suitable for high-frequency switching applications up to 1MHz, but it's essential to consider the device's switching losses, gate charge, and parasitic capacitances to ensure optimal performance and minimize electromagnetic interference (EMI).
    • To protect the IRF7341QTR from overvoltage and overcurrent conditions, use a voltage clamp or a zener diode to limit the voltage, and consider adding a current sense resistor and a fuse or a current limiter to prevent excessive current.
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