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    Part Img IRF7309PBF datasheet by International Rectifier

    • 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
    • Find it at Findchips.com

    IRF7309PBF datasheet preview

    IRF7309PBF Frequently Asked Questions (FAQs)

    • The maximum operating temperature range for the IRF7309PBF is -55°C to 175°C.
    • To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
    • The maximum gate-source voltage that can be applied to the IRF7309PBF is ±20V.
    • Yes, the IRF7309PBF is suitable for high-frequency switching applications up to 1 MHz. However, the user should ensure that the device is properly driven and the layout is optimized to minimize parasitic inductance and capacitance.
    • To protect the IRF7309PBF from ESD, handle the device by the body or use an anti-static wrist strap. Ensure that the workspace and equipment are also ESD-protected.
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